Apr 27, 2011

Toshiba’s 19nm NAND flash memory and SanDisk


Now SanDisk and Toshiba have developed and fabricated NAND flash memory modules with 19nm process technology.
The new process, which is the finest yet achieved, has been applied to 2-bit-per-cell (X2) 64 gigabit monolithic chips and offers the highest single chip density of 8GB. It will allow for the creation of 128GB devices using 16 chips for use in smartphones, tablets and removable storage devices with the high capacities and small form factors.


Implementing sophisticated advanced process innovations and cell-design solutions for the new memory die, SanDisk says that its "All-Bit-Line architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell NAND flash memory chips that do not sacrifice performance or reliability."
Source: gizmag